Atomic layer deposited tantalum containing adhesion layer
US7605469B2 · kind B2 · utility
0Cited by
25References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2004 |
| Grant date | Oct 20, 2009 |
| Priority date | — |
| Expiry date | Jun 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28562
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Apparatus and methods of fabricating an atomic layer deposited tantalum containing adhesion layer within at least one dielectric material in the formation of a metal, wherein the atomic layer deposition tantalum containing adhesion layer is sufficiently thin to minimize contact resistance and maximize the total cross-sectional area of metal, including but not limited to tungsten, within the contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.