Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array thereby manufactured

US7606056B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Fabio Pellizzer · Boise, US
• Roberto Bez · Milano, IT
• Maria Santina Marangon · Cernusco sul Naviglio, IT
• Roberta Piva · Ferrara, IT
• Laura Aina · Arcore, IT

Key dates

• Filing date: Dec 22, 2005
• Grant date: Oct 20, 2009
• Expiry date: May 21, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A process for manufacturing a phase change memory array includes the steps of: forming a plurality of phase change memory cells in an array region of a semiconductor wafer, the phase change memory cells arranged in rows and columns according to a row direction and to a column direction, respectively; forming a control circuit in a control region of the semiconductor wafer; forming a plurality of first bit line portions for mutually connecting phase change memory cells arranged on a same column; forming first level electrical interconnection structures; and forming second level electrical interconnection structures above the first level electrical interconnection structures. The first level electrical interconnection structures include second bit line portions laying on and in contact with the first bit line portions and projecting from the first bit line portions in the column direction for connecting the first bit line portions to the control circuit.