Magnetic memory device
US7606063B2 · kind B2 · utility
13Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2007 |
| Grant date | Oct 20, 2009 |
| Priority date | — |
| Expiry date | Jun 18, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device includes a substrate, a magnetic tunneling junction (MTJ) structure disposed on the substrate, and a capping layer disposed on the MTJ structure. By adding a capping layer on the MTJ structure, the property of the magnetic memory device is improved, the magnetoresistance (MR) ratio is raised, and the time cost by the magnetic memory device to process data is effectively reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.