Patent · US Active

Method for manufacturing a SOI substrate associating silicon based areas and GaAs based areas

US7608491B2 · kind B2 · utility

5Cited by

2References

9Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Laurent Clavelier · Grenoble, FR
Chrystel Deguet · Meylan, FR

Key dates

Filing date	Dec 19, 2007
Grant date	Oct 27, 2009
Priority date	—
Expiry date	Apr 20, 2028

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/544
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a method for manufacturing an SOI substrate, associating silicon based areas and areas of GaAs based material at the thin layer of the SOI substrate, the SOI substrate comprising a silicon support supporting successively a layer of dielectric material and a thin layer of silicon. The method comprises the following steps:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.