Method for fabricating a semiconductor device
US7608546B2 · kind B2 · utility
6Cited by
1References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2007 |
| Grant date | Oct 27, 2009 |
| Priority date | — |
| Expiry date | Jun 20, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes forming an etch target layer over a substrate that includes a cell region and a peripheral region. A first hard mask layer, a second hard mask layer, and an anti-reflective coating layer are formed over the etch target layer. A photosensitive pattern is formed over the anti-reflective coating layer. The anti-reflective coating layer is etched to have a width smaller than the width of the photosensitive pattern. The second hard mask layer is etched. A main etching and an over-etching are performed on the first hard mask layer. The etch target layer is then etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.