Non-volatile switching element, method for manufacturing the same, and integrated circuit having non-volatile switching elements
US7608849B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2006 |
| Grant date | Oct 27, 2009 |
| Priority date | — |
| Expiry date | Apr 27, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/93
Abstract
The present invention provides a non-volatile switching element having a novel structure that operates at a high speed and enables high integration, and an integrated circuit that includes such non-volatile switching elements. The switching element includes: a switching film formed on a substrate, made of a material causing a 10 times or greater change in electric resistance with a temperature change within a range of ±80 K from a predetermined temperature; a Peltier element causing the switching film to have the temperature change; a heat conducting/electric insulating film provided between the switching film and the Peltier element, to conduct heat from the Peltier element; and a pair of electrodes connected to the switching film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.