Field effect transistor

US7608888B1 · kind B1 · utility

Assignee

• QSpeed Semiconductor Inc. · US

Inventors

• Jian Li · Beijing, CN
• Ho-Yuan Yu · Richardson, US

Key dates

• Filing date: Jun 10, 2005
• Grant date: Oct 27, 2009
• Expiry date: Jan 31, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/85

Abstract

A field effect transistor (FET), in accordance with one embodiment, includes a first semiconductor layer, a first dielectric layer, a second semiconductor layer, a second dielectric layer and a third semiconductor layer. The first dielectric layer may be disposed upon the first semiconductor layer, wherein the first semiconductor layer has a first conductivity type. The second semiconductor layer, having a second conductivity type, may be disposed upon the first dielectric layer. The second dielectric layer may be disposed upon the second semiconductor layer. The third semiconductor layer, having a first conductivity type, may be disposed upon the first semiconductor layer between a first and second portion of the first dielectric layer, a first and second portion of the second semiconductor layer and a first and second portion of the second dielectric layer. The FET may also include a third dielectric layer disposed between the third semiconductor layer and the first and second portions of the second semiconductor layer.