Patent · US Active

Sub-surface region with diagonal gap regions

US7608897B2 · kind B2 · utility

0Cited by
28References
20Claims
0Family size

Inventors

Key dates

Filing dateJan 28, 2008
Grant dateOct 27, 2009
Priority date—
Expiry dateJan 28, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/60
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Diagonal deep well region for routing the body-bias voltage for MOSFETS in surface well regions is provided and described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.