Spin transistor using stray magnetic field
US7608901B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2007 |
| Grant date | Oct 27, 2009 |
| Priority date | — |
| Expiry date | Oct 9, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/933
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a spin transistor including: a semiconductor substrate having a channel layer formed therein; first and second electrodes which are formed to be spaced apart from each other on the substrate at a predetermined distance along a longitudinal direction of the channel layer; a source and drain which include magnetized ferromagnetic materials and are formed to be spaced apart form each other between the first electrode and the second electrode at a predetermined distance along the longitudinal direction of the channel layer; and a gate which is formed on the substrate between the source and the drain, and adjusts spin orientations of electrons passing through the channel layer, wherein the electrons passing through the channel layer are spin-aligned at a lower side of the source by a stray magnetic field of the source and spin-filtered at a lower side of the drain by a stray field of the drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.