High resistivity thin film composition and fabrication method
US7609144B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Dec 8, 2006 |
| Grant date | Oct 27, 2009 |
| Priority date | — |
| Expiry date | Oct 24, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49082
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin film composition is made from silicon, an insulator such as alumina or silicon dioxide, and at least one additional material such as chromium, nickel, boron and/or carbon. These materials are combined to provide a thin film having a ρ of at least 0.02 Ω-cm (typically 0.02-1.0 Ω-cm), and a TCR of less than ±1000 ppm/° C. (typically less than ±300 ppm/° C.). A sheet resistance of at least 20 kΩ/□ may also be obtained. The resulting thin film is preferably at least 200 thick, to reduce surface scattering conduction currents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.