High brightness—multiple beamlets source for patterned X-ray production

US7609815B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Ka-Ngo Leung · Hercules, US
• Qing Ji · Albany, US
• William A. Barletta · Oakland, US
• Ximan Jiang · Pleasant Hill, US
• Lili Ji · Nanjing, CN

Key dates

• Filing date: Jun 1, 2007
• Grant date: Oct 27, 2009
• Expiry date: Nov 23, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/3171
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 μm, with inter-aperture spacings of 12 μm. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.