Vapor deposition of metal carbide films
US7611751B2 · kind B2 · utility
581Cited by
92References
65Claims
0Family size
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Key dates
| Filing date | Nov 1, 2006 |
| Grant date | Nov 3, 2009 |
| Priority date | — |
| Expiry date | Apr 8, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45542
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of forming metal carbide thin films are provided. According to preferred embodiments, metal carbide thin films are formed in an atomic layer deposition (ALD) process by alternately and sequentially contacting a substrate in a reaction space with spatially and temporally separated vapor phase pulses of a metal source chemical, a reducing agent and a carbon source chemical. The reducing agent is preferably selected from the group consisting of excited species of hydrogen and silicon-containing compounds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.