Method of making a semiconductor element

US7611958B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Klaus Goller · Dresden, DE
• Tanja Schest · Steinberg am See, DE

Key dates

• Filing date: Dec 5, 2007
• Grant date: Nov 3, 2009
• Expiry date: Apr 21, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3212
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of producing a capacitor that includes producing a first electrode having a first surface; forming a recess in an element, walls of the element and the first surface of the first electrode defining the recess, the element having a first surface exterior of the recess; forming a dielectric layer on the element, the dielectric layer oriented against the first surface of the element and against the walls of the element within the recess; polishing off at least a portion of the dielectric layer oriented against the first surface of the element to electrically isolate the portion of the dielectric layer located in the recess from any portion of the dielectric layer remaining outside the recess; and producing a second electrode, the second electrode oriented at least partially within the recess with the dielectric layer oriented between the first electrode and the second electrode.