Methods of selectively forming epitaxial semiconductor layer on single crystalline semiconductor and semiconductor devices fabricated using the same
US7611973B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2005 |
| Grant date | Nov 3, 2009 |
| Priority date | — |
| Expiry date | Nov 3, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0323
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In methods of selectively forming an epitaxial semiconductor layer on a single crystalline semiconductor and semiconductor devices fabricated using the same, a single crystalline epitaxial semiconductor layer and a non-single crystalline epitaxial semiconductor layer are formed on a single crystalline semiconductor and a non-single crystalline semiconductor pattern respectively, using a main semiconductor source gas and a main etching gas. The non-single crystalline epitaxial semiconductor layer is removed using a selective etching gas. The main gases and the selective etching gas are alternately and repeatedly supplied at least two times to selectively form an elevated single crystalline epitaxial semiconductor layer having a desired thickness only on the single crystalline semiconductor. The selective etching gas suppresses formation of an epitaxial semiconductor layer on the non-single crystalline semiconductor pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.