Manufacture method for semiconductor device having improved copper diffusion preventive function of plugs and wirings made of copper or copper alloy
US7611984B2 · kind B2 · utility
10Cited by
7References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 14, 2005 |
| Grant date | Nov 3, 2009 |
| Priority date | — |
| Expiry date | Jun 3, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
(a) A copper alloy film containing at least two types of metal elements in addition to copper is formed on the surface of an insulator containing oxygen and formed on a semiconductor substrate. (b) A metal film made of pure copper or copper alloy is formed on the copper alloy film. (c) After the step (a) or (b), heat treatment is performed under the condition that a metal oxide film is formed on a surface of the insulator through reaction between the oxygen in the insulator and the metal elements in the copper alloy film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.