Method for removing silicon oxide film and processing apparatus
US7611995B2 · kind B2 · utility
7Cited by
6References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2004 |
| Grant date | Nov 3, 2009 |
| Priority date | — |
| Expiry date | Aug 16, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon dioxide film removing method is capable of removing a silicon dioxide film, such as a natural oxide film or a chemical oxide film, at a temperature considerably higher than a room temperature. The silicon dioxide film removing method of removing a silicon dioxide film formed on a workpiece in a processing vessel 18 that can be evacuated uses a mixed gas containing HF gas and NH3 gas for removing the silicon dioxide film. The silicon dioxide film can be efficiently removed from the surface of the workpiece by using the mixed gas containing HF gas and NH3 gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.