Image sensor with a gate electrode between the photoelectric conversion region and the charge detection region, the gate electrode comprising p-type and n-type regions adjacent to one another and method of fabricating the same
US7612392B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2006 |
| Grant date | Nov 3, 2009 |
| Priority date | — |
| Expiry date | Feb 15, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/802
Abstract
Example embodiments relate to an image sensor and a fabrication method thereof. An image sensor may include a semiconductor substrate. A charge transfer structure may be formed on the semiconductor substrate. The charge transfer structure may include a gate insulating film that may be formed on a channel region in the semiconductor substrate between a photoelectric conversion region and charge detection region, and a transfer gate electrode that may be formed on the gate insulating film that may have a region doped with a first conductivity type impurity-doped region and a second conductivity type impurity-doped region which may be adjacent to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.