Non-volatile memory cell
US7612401B2 · kind B2 · utility
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8References
4Claims
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Key dates
| Filing date | Jan 25, 2006 |
| Grant date | Nov 3, 2009 |
| Priority date | — |
| Expiry date | Aug 23, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A semiconductor device comprises a semiconductor substrate, and a non-volatile memory cell provided on the semiconductor substrate, the non-volatile memory cell comprising a tunnel insulating film having a film thickness periodically and continuously changing in a channel width direction of the non-volatile memory cell, a floating gate electrode provided on the tunnel insulating film, a control gate electrode provided above the floating gate electrode, and an interelectrode insulating film provided between the control gate electrode and the floating gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.