Semiconductor device with improved contact fuse
US7612454B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2008 |
| Grant date | Nov 3, 2009 |
| Priority date | — |
| Expiry date | Jul 14, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One aspect of the invention provides an integrated circuit(IC) [400b]. The IC comprises transistors [410b] and contact fuses [422b]. The contact fuses each comprise a conducting layer [424b], a frustum-shaped contact [426b] has a narrower end that contacts the conducting layer and a first metal layer [427b] that is located over the conducting layer. A wider end of the frustum-shaped contact contacts the first metal layer. The frustum-shaped contact has a ratio of an opening of the wider end to the narrower end that is at least about 1.2. The contact fuses each further include a heat sink [432b] that is located over and contacts the first metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.