Magnetic memory device and method of fabricating the same
US7612969B2 · kind B2 · utility
4Cited by
2References
1Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 21, 2006 |
| Grant date | Nov 3, 2009 |
| Priority date | — |
| Expiry date | Aug 16, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49044
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device includes a pinning layer, a pinned layer, an insulation layer, which are sequentially stacked on a semiconductor substrate. The magnetic memory device further includes a free layer disposed on the insulation layer, a capping layer disposed on the free layer and an MR (magnetoresistance) enhancing layer interposed between the free layer and the capping layer. The MR enhancing layer is formed of at least one anti-ferromagnetic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.