Method and apparatus for forming expitaxial layers
US7615390B2 · kind B2 · utility
7Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2003 |
| Grant date | Nov 10, 2009 |
| Priority date | — |
| Expiry date | Aug 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of depositing epitaxial layers based on Group IV elements on a silicon substrate by Chemical Vapor Deposition, wherein nitrogen or one of the noble gases is used as a carrier gas, and the invention further provides a Chemical Vapor Deposition apparatus (10) comprising a chamber (12) having a gas input port (14) and a gas output port (16), and means (18) for mounting a silicon substrate within the chamber (12), said apparatus further including a gas source connected to the input port and arranged to provide nitrogen or a noble gas as a carrier gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.