Mathieu Caymax
4Patents
3h-index
6Co-inventors
36Inventor score
Filing activity: Aug 13, 2003 → May 25, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7605060B2 | Method of epitaxial deoposition of an n-doped silicon layer | Electricity | 117 | Expired |
| US6906400B2 | SiGe strain relaxed buffer for high mobility devices and a method of fabricating it | Electricity | 25 | Expired |
| US7615390B2 | Method and apparatus for forming expitaxial layers | Electricity | 7 | Expired |
| US7465626B2 | Method for forming a high-k dielectric stack | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.