HDP/PECVD methods of fabricating stress nitride structures for field effect transistors
US7615432B2 · kind B2 · utility
12Cited by
3References
16Claims
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Key dates
| Filing date | Nov 2, 2005 |
| Grant date | Nov 10, 2009 |
| Priority date | — |
| Expiry date | Oct 8, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0184
Abstract
A stress nitride structure is formed on an integrated circuit field effect transistor by high density plasma (HDP) depositing a first stress nitride layer on the integrated circuit field effect transistor and then plasma enhanced chemical vapor depositing (PECVD) a second stress nitride layer on the first stress nitride layer. The first stress nitride layer is non-conformal and the second stress nitride layer is conformal. Related structures also are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.