Integrated circuit bipolar transistor
US7615455B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2006 |
| Grant date | Nov 10, 2009 |
| Priority date | — |
| Expiry date | Apr 24, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/177
Abstract
A bipolar transistor having a base region resting by its lower surface on a collector region and surrounded with a first insulating layer, a base contact conductive region in contact with an external upper peripheral region of the base region, a second insulating region in contact with an intermediary upper peripheral region of the base region, an emitter region in contact with the central portion of the base region. The level of the central portion is higher than the level of the intermediary portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.