Method of manufacturing gallium nitride semiconductor
US7615470B2 · kind B2 · utility
5Cited by
9References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2005 |
| Grant date | Nov 10, 2009 |
| Priority date | — |
| Expiry date | Mar 5, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides to a gallium nitride (GaN) semiconductor and a method of manufacturing the same, capable of reducing crystal defects caused by a difference in lattice parameters, and minimizing internal residual stress. In particular, since a high-quality GaN thin film is formed on a silicon wafer, manufacturing costs can be reduced by securing high-quality wafers with a large diameter at a low price, and applicability to a variety of devices and circuit can also be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.