Field-effect transistor structures with gate electrodes with a metal layer

US7615807B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Johann Harter · Dresden, DE
• Thomas Schuster · Ottenbach, DE

Key dates

• Filing date: Sep 4, 2007
• Grant date: Nov 10, 2009
• Expiry date: Apr 28, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/28247
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Provided is an integrated circuit including a transistor with a gate electrode. The gate electrode includes a polysilicon layer in contact with a gate dielectric layer separating the gate electrode and a semiconductor substrate that comprises an active region of the transistor. The gate electrode includes sidewall structures extending along lower portions of opposing sidewalls of the polysilicon layer, the lower portion being oriented to the semiconductor substrate. The gate electrode also includes a barrier layer. A first section of the barrier layer extends along an upper portion of the sidewall of the polysilicon layer, the upper portion being adjacent to the lower portion and facing away from the semiconductor substrate.