Ultra precision profile measuring method
US7616324B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 15, 2007 |
| Grant date | Nov 10, 2009 |
| Priority date | — |
| Expiry date | Apr 20, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B2290/60
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
To provide a method for measuring a plane mirror or a curved surface mirror close to plane mirror for condensing hard X-rays or soft X-rays used in a radiation light facility, especially an elliptical or tubular object having a steep profile exceeding 1×10−4 rad, ultra precisely with a precision on nano order or sub-nano order. Overall profile is measured by using overall profile data obtained from a Fizeau interferometer and stitching a plurality of micromeasurement data from a Michelson microinterferometer. A curved surface measured and a reference plane are measured simultaneously by the Fizeau interferometer, a plurality of pieces of partial profile data in a region narrower than the curved surface measured are acquired simultaneously by inclining the curved surface measured and the reference plane simultaneously and sequentially with respect to a reference plane, relative angle between the pieces of partial profile data is measured as the inclination angle of the reference plane, and adjoining pieces of partial profile data are stitched by utilizing coincidence between the inclination angle and an overlapped region thus obtaining overall profile data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.