Charge trap type non-volatile memory device and program method thereof
US7616496B2 · kind B2 · utility
8Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2007 |
| Grant date | Nov 10, 2009 |
| Priority date | — |
| Expiry date | Sep 5, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0466
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of programming a charge trap type non-volatile memory device includes applying a program pulse to a selected memory cell, applying a detrap pulse to the selected memory cell, and applying a program verify pulse to the memory cell. The charge trap type non-volatile memory device includes a memory cell array including a charge trap memory cell, and a high voltage generator for supplying a detrap pulse to the charge trap memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.