Device and method for manufacturing thin films
US7618493B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2004 |
| Grant date | Nov 17, 2009 |
| Priority date | — |
| Expiry date | Aug 4, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45572
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention herein provide a thin film-manufacturing device and a thin film-manufacturing method which are excellent in the mass-production ability and productivity, which permit the stable and continuous production of films over a long period of time while reproducing a good film thickness distribution, a good compositional distribution and a high film-forming rate and controlling the number of particles generated during the film-formation to a lower level. The device is one serving as a CVD device in which a film-forming gas is introduced into a reaction chamber from the upper portion of the chamber serving as a reaction space, through a shower head and a film is formed on a heated substrate, wherein the device is so designed that the upper reaction space is constructed by the substrate-supporting stage which is free of any rotational motion or free of any elevating motion, the shower head and a deposition-inhibitory plate, that the substrate-supporting stage and the deposition-inhibitory plate are so arranged as to form, between them, a concentric gap or interstice serving as a gas-exhaust path through which an inert gas can flow from the upper portion of the gas-exhau…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.