Method for the production of a bipolar transistor comprising an improved base terminal

US7618871B2 · kind B2 · utility

Assignee

• austriamicrosystems AG

Inventors

• Gerald Meinhardt · Graz, AT
• Jochen Kraft · Bruck an der Mur, AT

Key dates

• Filing date: Jan 19, 2005
• Grant date: Nov 17, 2009
• Expiry date: Jan 19, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D10/054

Abstract

For the production of an improved bipolar transistor comprising a low-resistance base terminal, a dielectric layer is deposited over the semiconductor substrate and is highly doped via an implantation mask. In a subsequent controlled thermal step, the dopant is then indiffused into the semiconductor substrate from the dielectric layer serving as a dopant repository. This gives rise to a low-resistance region with which the extrinsic base can be defined carefully.