Jochen Kraft
32Patents
3h-index
40Co-inventors
63Inventor score
Filing activity: Dec 1, 2000 → Aug 27, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8378496B2 | Semiconductor substrate with interlayer connection and method for production of a semiconductor substrate with interlayer connection | Electricity | 22 | Active |
| US7618871B2 | Method for the production of a bipolar transistor comprising an improved base terminal | Electricity | 4 | Expired |
| US7863170B2 | Semiconductor body comprising a transistor structure and method for producing a transistor structure | Electricity | 3 | Active |
| US9753218B2 | Semiconductor device with integrated mirror and method of producing a semiconductor device with integrated mirror | Physics | 3 | Active |
| US8623762B2 | Semiconductor device and a method for making the semiconductor device | Electricity | 2 | Active |
| US6562547B2 | Method for producing structure in chips | Electricity | 1 | Expired |
| US9768131B2 | Method of producing a semiconductor device with protruding contacts | Electricity | 1 | Active |
| US8134179B2 | Photodiode with a reduced dark current and method for the production thereof | Emerging Cross-Sectional Technologies | 1 | Active |
| US11668636B2 | Particle density sensor using evanescent wave of waveguide | Physics | 1 | Active |
| US8796743B2 | Light-sensitive component | Electricity | 0 | Active |
| US11808654B2 | Integrated optical transducer and method for detecting dynamic pressure changes | Performing Operations; Transporting | 0 | Active |
| US8658534B2 | Method for producing a semiconductor component, and semiconductor component | Electricity | 0 | Active |
| US9245843B2 | Semiconductor device with internal substrate contact and method of production | Electricity | 0 | Active |
| US10684412B2 | Semiconductor device with photonic and electronic functionality and method for manufacturing a semiconductor device | Electricity | 0 | Active |
| US11474039B2 | Chemical sensing device using fluorescent sensing material | Physics | 0 | Active |
| US8969193B2 | Method of producing a semiconductor device having an interconnect through the substrate | Electricity | 0 | Active |
| US9443759B2 | Method for producing a semiconductor device comprising a conductor layer in the semiconductor body and semiconductor body | Electricity | 0 | Active |
| US7629628B2 | Bipolar transistor including a base layer containing carbon atoms and having three distinct layers being doped with a trivalent substance | Electricity | 0 | Expired |
| US11127656B2 | Crack-resistant semiconductor devices | Electricity | 0 | Active |
| US9995894B2 | Semiconductor device with optical and electrical vias | Electricity | 0 | Active |
| US10243017B2 | Sensor chip stack and method of producing a sensor chip stack | Electricity | 0 | Active |
| US11764109B2 | Method of forming a through-substrate via and a semiconductor device comprising a through-substrate via | Electricity | 0 | Active |
| US9818724B2 | Interposer-chip-arrangement for dense packaging of chips | Electricity | 0 | Active |
| US9018726B2 | Photodiode and production method | Emerging Cross-Sectional Technologies | 0 | Active |
| US11355386B2 | Method for manufacturing a semiconductor device and semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.