Technique for matching performance of ion implantation devices using an in-situ mask
US7619229B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2006 |
| Grant date | Nov 17, 2009 |
| Priority date | — |
| Expiry date | Sep 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique for matching performance of ion implantation devices using an in-situ mask. In one particular exemplary embodiment, ion implantation is performed on a portion of a substrate while the remainder is masked off. The substrate is then moved to a second implanter tool. Implantation is then performed on another portion of the same substrate using the second tool while a mask covers the remainder of the substrate, including the first portion. After the second implantation process, parametric testing may be performed on semiconductor devices manufactured on the first and second portions to determine if there is variation in one or more performance characteristics of these semiconductor devices. If variations are found, changes may be suggested to one or more operating parameters of one of the implantation tools to reduce performance variation of implanters within the fabrication facility.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.