Semiconductor device and method of manufacturing the same
US7619239B2 · kind B2 · utility
16Cited by
6References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 2006 |
| Grant date | Nov 17, 2009 |
| Priority date | — |
| Expiry date | Nov 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
Abstract
A semiconductor device includes an n-channel MIS transistor and a p-channel MIS transistor on a semiconductor layer formed on an insulating layer, in which the channel of the n-channel MIS transistor is formed of a strained Si layer having biaxial tensile strain and the channel of the p-channel MIS transistor is formed of a strained SiGe layer having uniaxial compression strain in the channel length direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.