Method of fabricating CMOS transistor and CMOS transistor fabricated thereby
US7619285B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2008 |
| Grant date | Nov 17, 2009 |
| Priority date | — |
| Expiry date | Apr 25, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
Abstract
A CMOS transistor includes first and second conductivity type MOS transistors. The first conductivity type MOS transistor includes elevated source and drain regions which abut a channel region in a semiconductor substrate and which are formed by elevated epitaxial layers, each including a first epitaxial layer formed in a first recessed of the semiconductor substrate and a second epitaxial layer formed on the first epitaxial layer and extending to a level that is above an upper surface of the semiconductor substrate. The second conductivity type MOS transistor includes recessed source and drain regions which abut a channel region of the semiconductor substrate and which are formed by recessed epitaxial layers, each including a first epitaxial layer formed in a second recess of the semiconductor substrate and a second epitaxial layer formed in the second recess on the first epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.