Gated thyristor and related system and method
US7619863B2 · kind B2 · utility
0Cited by
6References
38Claims
0Family size
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Key dates
| Filing date | Jul 5, 2007 |
| Grant date | Nov 17, 2009 |
| Priority date | — |
| Expiry date | Sep 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/713
Abstract
An embodiment of a protection circuit, comprising a first PNP-type bipolar transistor and a second NPN-type bipolar transistor, the base of the first transistor being connected to the collector of the second transistor and the collector of the first transistor being connected to the base of the second transistor, in which a MOS transistor is connected between the collector and the emitter of the second transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.