Methods for critical dimension control during plasma etching
US7622051B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2003 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | May 10, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching a substrate in a plasma processing chamber is disclosed. The method includes introducing the substrate having thereon an underlying layer, an anti-reflective layer above the underlying layer, and a photo-resist layer above the anti-reflective layer into the chamber. The method also includes flowing a gas mixture into the chamber, the gas mixture includes a flow of a hydrofluorocarbon gas, a flow of fluorocarbon gas, a flow of a halogen-containing gas other than the hydrofluorocarbon gas, and a flow of oxygen gas. The method further includes striking a plasma from the gas mixture. The method additionally includes etching at least through the anti-reflective layer with the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.