Method for manufacturing semiconductor device
US7622340B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2006 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | Aug 27, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes doping a surface of a silicon-containing dielectric film with nitrogen to change an etching rate of the silicon-containing dielectric film relative to a predetermined solution such that the etching rate is lower at a surface portion doped with nitrogen than at a portion therebelow. The method subsequently includes patterning the silicon-containing dielectric film by a first etching process to form an etching mask, subsequently to the first etching process, removing etching residues of the silicon-containing dielectric film by a second etching process including wet etching using the predetermined solution, and subsequently to the second etching process, patterning an etching target film by a third etching process using the etching mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.