Semiconductor device structures with backside contacts for improved heat dissipation and reduced parasitic resistance
US7622357B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2006 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | Nov 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a device structure that comprises a substrate with front and back surfaces, and at least one semiconductor device with a first conductive structure located in the substrate and a second conductive structure located thereover. A first conductive contact is located over the front surface of the substrate and laterally offset from the first conductive structure. The first conductive contact is electrically connected to the first conductive structure by a conductive path that extends: (1) from the first conductive structure through the substrate to the back surface, (2) across the back surface, and (3) from the back surface through the substrate to the first conductive contact on the front surface. Further, a second conductive contact is located over the front surface and is electrically connected to the second conductive structure. The conductive path can be formed by lithography and etching followed by metal deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.