Semiconductor device including multi-gate metal-insulator-semiconductor (MIS) transistor
US7622773B2 · kind B2 · utility
31Cited by
3References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2007 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | Feb 13, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/021
Abstract
In a semiconductor device including a multi-gate MIS transistor having a channel on a plurality of surfaces, a gate electrode is formed on a gate insulating film on side surfaces of an island-like semiconductor layer formed along a given direction on an insulating film, and source/drain electrodes are formed in contact with the semiconductor layer. The semiconductor layer has a plurality of side surfaces along the given direction. All angles formed by adjacent side surfaces are larger than 90°. A section perpendicular to the given direction is vertically and horizontally symmetrical.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.