Semiconductor device
US7622776B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 15, 2007 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | Jan 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/87
Abstract
A semiconductor device includes: a substrate including a compound semiconductor, a semiconductor layer formed on a surface of the substrate, a plurality of gate electrodes formed on the semiconductor layer, a plurality of source electrodes formed on the semiconductor layer, a plurality of drain electrodes formed on the semiconductor layer, a via hole configured to extend from a substrate side of the semiconductor layer to a rear surface of the source electrode, a ground electrode which is formed on an inner wall of the via hole and on the rear surface of the substrate and connects the plurality of source electrodes, and a first air bridge interconnection which is formed on a surface side of the source electrode and connects the plurality of source electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.