Process for high voltage superjunction termination
US7622787B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2008 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | May 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has an active region and a termination region surrounding the active region. The first main surface is oxidized. A first plurality of trenches and a first plurality of mesas are formed in the termination region. The first plurality of trenches in the termination region are filled with a dielectric material. A second plurality of trenches in the termination region. The second plurality of trenches are with the dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.