Method for inspecting transmission line characteristic of a semiconductor device using signal reflection measurement
US7622930B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2007 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | Jan 23, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2886
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for inspecting a semiconductor device includes establishing a first circuit state in which electrical conduction through at least one of branch transmission line portions is established and electrical conduction through at least one other branch transmission line portion is prevented. Then, electrical signal reflection characteristics of the transmission line are measured. The method also includes establishing a second circuit state in which electrical conduction through the at least one of the branch transmission line portions is prevented and electrical conduction through the at least one other branch transmission line portions is established. Then, the electrical signal reflection characteristics of the transmission line are measured. The second circuit state is a mirror image of the first circuit state with respect to the primary transmission line. The measured values are compared.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.