Multiple metal-insulator-metal capacitors and method of fabricating the same
US7623338B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 30, 2006 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | Dec 18, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a device including multiple metal-insulator-metal (MIM) capacitors and a method of fabricating the same, the multiple MIM capacitors comprise a lower interconnect in a substrate; a first dielectric layer on the lower interconnect; a first intermediate electrode pattern on the first dielectric layer overlapping with the lower interconnect; a second intermediate electrode pattern on the first dielectric layer and spaced apart from the first intermediate electrode pattern in a same plane of the device as the first intermediate electrode pattern; a second dielectric pattern on the second intermediate electrode pattern; and an upper electrode pattern on the second dielectric pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.