Resistance change memory device
US7623370B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2007 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | Apr 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistance change memory device including a substrate, first and second wiring lines formed above the substrate to be insulated from each other, and memory cells disposed between the first and second wiring lines wherein the memory cell includes, a variable resistance element for storing as information a resistance value and a Schottky diode connected in series to the variable resistance element. The variable resistance element has a recording layer composed of a composite compound containing at least two types of cation elements, at least one type of the cation element being a transition element having “d”-orbit, in which electrons are incompletely filled, the shortest distance between adjacent cation elements being 0.32 nm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.