Semiconductor pressure sensor and method for manufacturing semiconductor pressure sensor
US7624644B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 22, 2008 |
| Grant date | Dec 1, 2009 |
| Priority date | — |
| Expiry date | Aug 22, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0054
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor pressure sensor includes a diaphragm; a resistor provided on a top surface of the diaphragm; an insulating film formed on the diaphragm and the resistor having a penetrating part exposing a top surface of the resistor; and a wiring pattern formed from the top surface of the resistor exposed by the penetrating part to a top surface of the insulating film; wherein a distance between a first crossing part where a plane orthogonal to the top surface of the diaphragm meets a top end of a side plane of the penetrating part and a second crossing part where the plane orthogonal to the top surface of the diaphragm meets a bottom of the side plane of the penetrating part is equal or greater than a thickness of the insulating film by a factor of a square root of two.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.