Yasuhide Fujioka
8Patents
6h-index
11Co-inventors
56Inventor score
Filing activity: Jul 8, 1993 → Aug 22, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5994762A | Semiconductor integrated circuit device including boron-doped phospho silicate glass layer and manufacturing method thereof | Electricity | 40 | Expired |
| US5684315A | Semiconductor memory device including memory cells each having an information storage capacitor component formed over control electrode of cell selecting transistor | Electricity | 20 | Expired |
| US5449420A | High strength steel member with a low yield ratio | Emerging Cross-Sectional Technologies | 18 | Expired |
| US5853502A | Carburizing steel and steel products manufactured making use of the carburizing steel | Mechanical Engineering; Lighting; Heating | 13 | Expired |
| US5374322A | Method of manufacturing high strength steel member with a low yield ratio | Emerging Cross-Sectional Technologies | 12 | Expired |
| US6126897A | Carburizing steel and steel products manufactured making use of the carburizing steel | Mechanical Engineering; Lighting; Heating | 10 | Expired |
| US7624644B2 | Semiconductor pressure sensor and method for manufacturing semiconductor pressure sensor | Physics | 2 | Active |
| US7987727B2 | Semiconductor pressure sensor and fabrication method thereof | Physics | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.