Plasma-assisted sputter deposition system
US7625472B2 · kind B2 · utility
2Cited by
10References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 11, 2005 |
| Grant date | Dec 1, 2009 |
| Priority date | — |
| Expiry date | Mar 29, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/851
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma-assisted sputter deposition system includes a reactor 1 into which a process gas is introduced; a doughnut-shaped electrode to be sputtered by plasma, in which a lower surface thereof is angled to a surface of a wafer; a spinning plate that spin on its central axis while moving over a circle above the doughnut-shaped electrode, in which the spinning plate contains magnet arrangement; an electrical power sources connected to the doughnut-shaped electrode, and a wafer holder for placing a wafer for film deposition, which is at rest during the film deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.