Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers
US7626116B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2006 |
| Grant date | Dec 1, 2009 |
| Priority date | — |
| Expiry date | Feb 23, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of reducing propagation of threading dislocations into active areas of an optoelectronic device having a III-V material system includes growing a metamorphic buffer region in the presence of an isoelectronic surfactant. A first buffer layer may be lattice matched to an adjacent substrate and a second buffer layer may be lattice matched to device layers disposed upon the second buffer layer. Moreover, multiple metamorphic buffer layers fabricated in this manner may be used in a single given device allowing multiple layers to have their band gaps and lattice constants independently selected from those of the rest of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.