Lateral phase change memory with spacer electrodes
US7626191B2 · kind B2 · utility
8Cited by
7References
8Claims
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Key dates
| Filing date | May 17, 2006 |
| Grant date | Dec 1, 2009 |
| Priority date | — |
| Expiry date | Jul 7, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
A lateral phase change memory with spacer electrodes and method of manufacturing the same are provided. The memory is formed by connecting the conductive electrodes with lower resistivity and the spacer electrodes with higher resistivity, and filling the phase change material between the spacer electrodes. Therefore, the area that the phase change material contacts the spacer electrodes and the volume of the phase change material can be reduced; thereby the programming current and power consumption of the phase change memory are reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.