Extreme low-k dielectric film scheme for advanced interconnect
US7626245B2 · kind B2 · utility
7Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 2, 2008 |
| Grant date | Dec 1, 2009 |
| Priority date | — |
| Expiry date | Aug 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An extreme low-k (ELK) dielectric film scheme for advanced interconnects includes an upper ELK dielectric layer and a lower ELK dielectric with different refractive indexes. The refractive index of the upper ELK dielectric layer is greater than the refractive index of the lower ELK dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.